EKSTRAKSI CAHAYA DALAM SILIKON UNTUK PENGEMBANGAN SUMBER OPTIK YANG EFISIEN

AKBAR, RAHMAT and Arsyad, Fitri Suryani (2023) EKSTRAKSI CAHAYA DALAM SILIKON UNTUK PENGEMBANGAN SUMBER OPTIK YANG EFISIEN. Undergraduate thesis, Sriwijaya University.

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Abstract

This research aims to optimize and characterize a new ion implantation technique to obtain emission from silicon that is fully compatible with mature CMOS technology. Silicon has the disadvantage of having an indirect band gap, which reduces the efficiency of light extraction from silicon. Therefore, carbon ion implantation on silicon in this study becomes the method used to enhance light extraction efficiency in silicon, and annealing is performed to repair the damage to the silicon material after ion implantation. To understand the characteristics of silicon before ion implantation, after carbon ion implantation, and after annealing, photoluminescence technique was used. After performing photoluminescence, it can be concluded that the higher the laser power used, the greater the intensity obtained during photoluminescence. The highest intensity is found in the silicon sample with single implantation with a value of 0.394 V at a power of 900 mWcm-2 at a temperature of 10 K. Meanwhile, the intensity value in silicon that has undergone annealing is slightly smaller than before annealing, with a value of 0.384 V before annealing and 0.365 V after annealing. In each spectrum, there is a peak at around 1.08 eV to 1.09 eV, which is very close to the silicon band gap energy of 1.1 eV.

Item Type:	Thesis (Undergraduate)
Uncontrolled Keywords:	Annealing, FWHM, Implantasi Ion, Karbon, Photoluminescence, Silikon Fotonik
Subjects:	Q Science > QC Physics > QC350-467 Optics. Light
Divisions:	08-Faculty of Mathematics and Natural Science > 45201-Physics (S1)
Depositing User:	Rahmat Akbar
Date Deposited:	10 Aug 2023 04:03
Last Modified:	10 Aug 2023 04:03
URI:	http://repository.unsri.ac.id/id/eprint/126839

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