ANALISIS VARIASI RANGKAIAN TRANSISTOR NPN TIPE 2N3055 TERHADAP NILAI DAYA KELUARAN

HATI, ESA PUTRI PERMATA and Caroline, Caroline (2020) ANALISIS VARIASI RANGKAIAN TRANSISTOR NPN TIPE 2N3055 TERHADAP NILAI DAYA KELUARAN. Undergraduate thesis, Sriwijaya University.

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Abstract

The use of conventional energy in power plants continuously can cause the energy to be exhausted. In addition, the use of this energy can also cause air pollution which has a negative impact on the environment. One of the renewable energy which is abundant is solar energy. In this research, a 2n3055 transistor-based solar panel prototype will be made as an alternative to solar panels to convert sunlight energy into electrical energy. Transistor 2n3055 has 3 terminals, namely base(B), collector(C) and emitter(E). In this research, three circuit variations will be made, namely B+C-, B+E-, and BE+C-. This test is start at 08: 00-16: 00 WIB using multimeter and luxmeter measuring devices. Based on these tests, the variation of transistor terminals and the intensity of sunlight affect the value of the output power of each prototype. At the same time, the power produced by the B+C- B+E- and BE+C- circuits is 2,104x10-3 W, 1,818x10-3 W dan 1,619x10-3 W. The BE+C- circuit produces the lowest power because, the emitter is an n-type semiconductor which has electron as a majority charge and has a negative polarity. Thus, when used as a positive pole the power produced is not optimal. Keywords: Solar panel, Transistor NPN 2N3055, intensity of sunlight.

Item Type:	Thesis (Undergraduate)
Uncontrolled Keywords:	Teknik Elektro, panel surya berbasis transistor npn tipe 2n3055
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering > TK1001-1841 Production of electric energy or power. Powerplants. Central stations > TK1087.B344 Photovoltaic power systems
Divisions:	03-Faculty of Engineering > 20201-Electrical Engineering (S1)
Depositing User:	Users 5694 not found.
Date Deposited:	14 Apr 2020 05:18
Last Modified:	14 Apr 2020 05:18
URI:	http://repository.unsri.ac.id/id/eprint/28874

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